eFuse V2.1 fix: datasheet-derived OVLO ladder + ILIM correction
Works the TPS25961 fix out from the datasheet rather than from memory, and re-solves it against resistors already on the BOM. OVLO: TI's 3-resistor ladder (eq 7/8) -> R46 620k->150k, R47 100k->10k, new R48 12k + R49 2.2k (=14.2k). UVLO 8.93 V typ, unchanged from today; OVLO 15.21 V typ, 15.81 V worst case. The OVLO ceiling is set by U3 (TPS562201, 4.5-17 V input), not by the eFuse -- that rules out a tempting 3-resistor solution tripping at 17.24 V. ILIM: R45 100k -> 33k. 0.516 A sat BELOW the board's own 621 mA inrush, so the part entered current limiting on every power-on (-> thermal shutdown -> retries -> latch-off). Inrush control comes from the fixed 5.17 V/ms slew rate, not ILIM, so raising ILIM costs no inrush protection; it is pure fault protection at ~27x the measured 56 mA load. Every value is already stocked and 620k loses its only user: one FEWER unique part, +2 placements. Co-Authored-By: Claude Opus 5 <noreply@anthropic.com>
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@@ -315,10 +315,34 @@ datasheet extraction, WebSearch/WebFetch for parts and reference designs.
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device sits in overvoltage lockout with the FET off (bench-confirmed: 12V_EXI =
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device sits in overvoltage lockout with the FET off (bench-confirmed: 12V_EXI =
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0 V, GC_ON = 0 V, W5100 unpowered). The earlier review note ("OVLO tied to GND
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0 V, GC_ON = 0 V, W5100 unpowered). The earlier review note ("OVLO tied to GND
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for the internal fixed threshold, abs max 6.5 V fine") caught the pin abs-max
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for the internal fixed threshold, abs max 6.5 V fine") caught the pin abs-max
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but MISSED that the fixed VIN cutoff is ~6 V. **Fix (V2.1):** drive OVLO from a
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but MISSED that the fixed VIN cutoff is ~6 V.
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divider off 12V_RAW so the trip sits ~14–16 V (above 12 V, below the 19 V max /
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the D3 clamp): e.g. **R_top ≈ 1.1 MΩ (12V_RAW→OVLO) + R_bottom ≈ 100 kΩ
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**FIX (V2.1), datasheet-derived 2026-10-02** — TI's 3-resistor ladder
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(OVLO→GND)** → OVLO pin = 1.24 V at ~15 V VIN, and ~1.0 V at 12 V (stays on).
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(§8.2.3.2) from 12V_RAW to GND, EN/UVLO tapped at R1–R2 and OVLO at R2–R3:
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VIN(UV) = VUVLO(R) × (R1+R2+R3)/(R2+R3) (eq 7)
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VIN(OV) = VOVLO(R) × (R1+R2+R3)/R3 (eq 8), both thresholds 1.24 V
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| ref | was | becomes | LCSC | already on board as |
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| R46 (R1, 12V_RAW→EN/UVLO) | 620 k | **150 k** | C93947 | R3 |
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| R47 (R2, EN/UVLO→OVLO) | 100 k | **10 k** | C25744 | R2, R9, R11, … |
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| R48 (R3a, OVLO→GND) NEW | — | **12 k** | C25752 | R10 |
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| R49 (R3b, series w/ R48) NEW | — | **2.2 k** | C25879 | R30 |
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R3 = 12 k + 2.2 k = 14.2 kΩ. Results across tolerance (VOVLO 1.20/1.24/1.27):
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**UVLO 8.93 V typ (8.64–9.14)** — identical to the current board, so turn-on
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behaviour is unchanged — and **OVLO 15.21 V typ (14.72–15.58)**, worst case
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with 1% resistors **15.81 V**. String current 68.9 µA at 12 V (TI requires
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≥20× the 0.1 µA pin leakage, i.e. ≥2 µA). OVLO pin sits at 0.98 V at 12 V and
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1.55 V at 19 V — far under its 6.5 V abs max, the lowest-rated pin on the part.
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**The OVLO ceiling is set by U3, not by the eFuse.** The TPS562201 buck is
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rated **4.5–17 V** input (19 V abs max), so OVLO must disconnect before the
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buck is overstressed. This rules out an otherwise attractive 3-resistor
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solution (150 k/10 k/12.4 k) that trips at 17.24 V typ / ~18 V worst case —
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it would leave U3 running out of spec. Do not "simplify" to that.
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**Cost:** every value above is already on the BOM, and 620 k (C137952) had
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R46 as its only user, so it drops out — **net one FEWER unique part**, +2
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placements.
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BENCH WORKAROUND to keep bring-up moving: inject 12 V straight onto 12V_EXI
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BENCH WORKAROUND to keep bring-up moving: inject 12 V straight onto 12V_EXI
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(C65+ pad or U3.3 VIN), bypassing the mis-set eFuse.
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(C65+ pad or U3.3 VIN), bypassing the mis-set eFuse.
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**D3 (SMAJ12A TVS) stays on the INPUT side on purpose** — it clamps
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**D3 (SMAJ12A TVS) stays on the INPUT side on purpose** — it clamps
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@@ -332,12 +356,28 @@ datasheet extraction, WebSearch/WebFetch for parts and reference designs.
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dV/dt = 5.17 V/ms (fixed, typical) ⇒ I = C·dV/dt = 120 µF × 5.17 V/ms =
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dV/dt = 5.17 V/ms (fixed, typical) ⇒ I = C·dV/dt = 120 µF × 5.17 V/ms =
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**621 mA** over a 2.3 ms ramp. R_ILIM only matters if it is set *below*
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**621 mA** over a 2.3 ms ramp. R_ILIM only matters if it is set *below*
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that figure.
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that figure.
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- **R45 = 100 kΩ ⇒ I_LIM ≈ 500 mA** (datasheet Equation 6: R_ILIM =
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- ⚠️ **R45 = 100 kΩ ⇒ I_LIM ≈ 0.516 A typ (0.42–0.61 A) is WRONG — it sits
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50000/I_LIM; 100 kΩ is one of TI's own characterised points, 0.516 A typ,
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BELOW this board's own 621 mA inrush.** The consequence is that the part
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±18% ⇒ 0.42–0.61 A). This both caps inrush at 500 mA and gives **3.8×
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enters active current limiting on *every* power-on; sustained current
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headroom** over the ~130 mA steady-state 12 V draw. 100 kΩ is deliberately
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limiting drives thermal shutdown → 3 auto-retries → latch-off. **Change to
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inside a valid ON-resistance bin — **Table 7-1 forbids 58.8–66.7 kΩ,
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R45 = 33 kΩ (C25779, already on the board as R1/R39/R40) ⇒ 1.52 A typ
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111–142 kΩ and 250–500 kΩ**; do not "round" R45 into those bands.
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(1.24–1.79 A)**, which clears the inrush even if the slew rate runs 30%
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fast (0.81 A).
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**Inrush protection does NOT come from ILIM — it comes from the fixed
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5.17 V/ms output slew rate**, which ramps the rail in 2.3 ms at 621 mA
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regardless of the ILIM setting. (The TPS25961DRV is 6-pin: OUT/OVLO/ILIM/
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GND/EN·UVLO/IN — there is NO dVdt pin, so the slew rate cannot be changed;
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the only other lever on inrush is reducing C65.) ILIM is therefore pure
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fault protection, and 1.52 A is ~27× the measured 56 mA load while staying
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far inside the console's 3.25 A supply.
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Measured 2026-10-02: the board draws **0.67 W at 12 V ≈ 56 mA** with the
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link up — about half the 130 mA originally budgeted. Note the W5100S spec
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is per LINK STATE, not traffic (100M Link 93 mA typ / 110 mA max vs Unlink
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40 mA): in 100BASE-TX the PHY drives idle symbols continuously, so an idle
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measurement with the link up already includes the dominant load and running
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traffic adds very little.
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**Table 7-1 forbids 58.8–66.7 kΩ, 111–142 kΩ and 250–500 kΩ** — 33 kΩ is
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clear of all three; do not "round" R45 into those bands.
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- **Startup dissipation is safe**: FET energy = ½CV² = **8.65 mJ** regardless
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- **Startup dissipation is safe**: FET energy = ½CV² = **8.65 mJ** regardless
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of ramp rate ⇒ ~3.0 W average over 2.9 ms. Figure 6-31 puts time-to-thermal-
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of ramp rate ⇒ ~3.0 W average over 2.9 ms. Figure 6-31 puts time-to-thermal-
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shutdown at ~3 W far beyond 100 ms. Steady-state loss is 106 mΩ × 0.13² =
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shutdown at ~3 W far beyond 100 ms. Steady-state loss is 106 mΩ × 0.13² =
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@@ -245,10 +245,25 @@ schematic changes.
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2026-09-16, FAB-BLOCKER for V2.1).** OVLO (pin 2) is tied to GND, which on
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2026-09-16, FAB-BLOCKER for V2.1).** OVLO (pin 2) is tied to GND, which on
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the TPS25961 selects the internal *fixed* overvoltage cutoff ~5.98 V — so a
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the TPS25961 selects the internal *fixed* overvoltage cutoff ~5.98 V — so a
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12 V rail is permanently in overvoltage lockout and the eFuse passes
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12 V rail is permanently in overvoltage lockout and the eFuse passes
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nothing (bench-confirmed: 12V_EXI=0, GC_ON=0, W5100 unpowered). **Fix:**
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nothing (bench-confirmed: 12V_EXI=0, GC_ON=0, W5100 unpowered).
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OVLO divider off 12V_RAW, R_top ≈ 1.1 M / R_bottom ≈ 100 k → trip ~15 V.
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**FIX WORKED OUT FROM THE DATASHEET 2026-10-02 — values final, needs
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See REVIEW.md eFuse entry. Bench workaround: feed 12 V onto 12V_EXI (C65+ /
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schematic + PCB work.** TI 3-resistor ladder (§8.2.3.2), EN/UVLO tapped at
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U3 VIN) to bypass it. This must be fixed before any V2.1 fab order.
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R1–R2 and OVLO at R2–R3, plus an ILIM correction:
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R46 620 k -> **150 k** (C93947) R1, top: 12V_RAW -> EN/UVLO
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R47 100 k -> **10 k** (C25744) R2: EN/UVLO -> OVLO
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R48 NEW -> **12 k** (C25752) \ R3 = 14.2 k in series,
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R49 NEW -> **2.2 k** (C25879) / OVLO -> GND
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R45 100 k -> **33 k** (C25779) ILIM 0.52 A -> 1.52 A
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U13 pin 2 (OVLO): disconnect from GND, wire to the R47/R48 junction.
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Gives UVLO 8.93 V typ (unchanged from today) and OVLO 15.21 V typ,
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15.81 V worst case — under U3's 17 V input rating, which is what actually
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caps the OVLO target. ILIM must exceed the board's own 621 mA inrush;
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0.52 A did not, so the part current-limited on every power-on.
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**Every value is already on the BOM and 620 k loses its only user, so this
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is one FEWER unique part, +2 placements.** Full derivation, tolerance
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analysis and the rejected alternatives are in REVIEW.md §eFuse.
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Bench workaround meanwhile: feed 12 V onto 12V_EXI (C65+ / U3 VIN), or
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lift U13 pin 2 (done on the lab unit). Must be fixed before any V2.1 fab.
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- [x] **D9 "USB" LED dark — OPEN SOLDER JOINT on its anode pad — FIXED by
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- [x] **D9 "USB" LED dark — OPEN SOLDER JOINT on its anode pad — FIXED by
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reflow 2026-09-30. Assembly defect on this unit, NOT a design bug.**
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reflow 2026-09-30. Assembly defect on this unit, NOT a design bug.**
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Symptom: D9 never lights, on USB-only or GC power. Measured 3V3 on the
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Symptom: D9 never lights, on USB-only or GC power. Measured 3V3 on the
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